The work will concerns several aspects:

1) materials and technologies assessment for realizing a yarn with the electronic properties of an extended field effect transistor. The device model to follow is that of a Thin Film device. According to this model the yarn should be made of three layers made with materials having different levels of electrical conductivity. The challenge is to find the most suitable materials and to assemble them with the aim of: a) obtaining good intrinsic and interface properties, which ensure good electronic properties and b)to obtain a yarn suitable to be employed in common industrial textile processes.

2) evaluation of the electronic model suitable for the yarn. This step is essential for the future development of a "circuital textile theory and modeling" as, similarly to what actually happens for silicon electronics, it is envisionable that future textile circuits will be designed on the basis of simulation softwares (e.g. SPICE) which, starting from the physical model of the single electronic component, allow to simulate the behaviour of complex circuits.